News Article
Epistar 150mm LEDs use Azzurro`s GaN-on-silicon technology
The firm has successfully transferred Azzurro's patented technology in just 4 months
Epistar and Azzurro have jointly manufactured GaN-on-silicon based LEDs utilising Epistar’s HB LED structures and Azzurro’s technology for 150mm GaN-on-silicon.
The successful completion of the joint project confirms the excellent performance that can be reached.
In particular the two companies are very satisfied about the development time of only 16 weeks. The firms transferred Epistar’s existing LED structures built on sapphire to the GaN-on-silicon material system.
This milestone takes GaN-on-silicon one step further towards implementation in mass production.
GaN-on-silicon growth is often associated with many technological challenges. But the use of templates with unique strain‐engineering technology from Azzurro enables epitaxy engineers to quickly transfer their LED structures to GaN-on-silicon.
What's more, the patented and proprietary buffer stress management enables as little as 4nm wavelength homogeneity. This helps to reduce binning and increase the yield of LED epiwafers.
Epistar’s Lee Biing‐Jye, Chairman states, “We are very excited about the outcome of this joined exercise which has exceeded all expectations regarding speed and cost of migration. The success helps us to utilise GaN-on-silicon which is a game changer for the industry ‐ and Epistar as a leading innovator is part of it.”
“We are very happy to see our customers gaining the advantages of GaN-on-silicon in such short periods when using our large area templates. It proves our business model to offer dedicated development packages and sophisticated engineering support,” adds Erwin Wolf, CEO of Azzurro.
He continues, “The technology to enable the LED industry to tap into the advantages of the volume, cost effectiveness and maturity of silicon foundries is ready with our strain‐engineered templates.”
The successful completion of the joint project confirms the excellent performance that can be reached.
In particular the two companies are very satisfied about the development time of only 16 weeks. The firms transferred Epistar’s existing LED structures built on sapphire to the GaN-on-silicon material system.
This milestone takes GaN-on-silicon one step further towards implementation in mass production.
GaN-on-silicon growth is often associated with many technological challenges. But the use of templates with unique strain‐engineering technology from Azzurro enables epitaxy engineers to quickly transfer their LED structures to GaN-on-silicon.
What's more, the patented and proprietary buffer stress management enables as little as 4nm wavelength homogeneity. This helps to reduce binning and increase the yield of LED epiwafers.
Epistar’s Lee Biing‐Jye, Chairman states, “We are very excited about the outcome of this joined exercise which has exceeded all expectations regarding speed and cost of migration. The success helps us to utilise GaN-on-silicon which is a game changer for the industry ‐ and Epistar as a leading innovator is part of it.”
“We are very happy to see our customers gaining the advantages of GaN-on-silicon in such short periods when using our large area templates. It proves our business model to offer dedicated development packages and sophisticated engineering support,” adds Erwin Wolf, CEO of Azzurro.
He continues, “The technology to enable the LED industry to tap into the advantages of the volume, cost effectiveness and maturity of silicon foundries is ready with our strain‐engineered templates.”
